Harmonized system of quality assessment for electronic components ; blank detail specification ; fixed ceramic dielectric ; capacitors of barrier layer type dielectric class 3 电子元件质量评定协调体系.空白详细规范.陶瓷介质绝
Harmonized system of quality assessment for electronic components : sectional specification : fixed ceramic dielectric capacitors of barrier layer type dielectric class 3 电子元件质量评定协调体系.分规范.固定陶瓷屏障型介质电容器
3 specification for harmonized system of quality assessment for electronic components - blank detail specification : fixed ceramic dielectric capacitors of barrier layer type dielectric class 3 电子元器件用质量评估协调体系规范.空白详细规范:固定式陶瓷介电阻挡层型电容器
The structure of the strained quantum well laser has been optimized , not only the well layer , the barrier layer , the waveguide layer and the cladding layer but also the content of al , in have been studied and designed 对应变量子阱激光器的结构进行了优化设计，对半导体激光器的阱层、垒层、波导层和限制层的厚度及in 、 al元素的含量进行了研究和设计。
In order to suppress the formation of silicide interfacial layer , a zro2 thin film was deposited as a barrier layer between hfo2 and si . the samples with barrier layer exhibited better leakage and c - v character than the directly deposited ones 作为阻挡层抑制hf和a的互扩散反应，减小了界面层厚度，并提高了界面层的氧化效率，与无阻档层的样品相比电学性能得到了显著的提高。
By the use of iteration method to solve schrodinger - poisson equations when algan barrier layer doped about 1 1018cm - 3 , the max sheet density of 2deg is 1 1012cm - 2 and the thickness of 2deg is increasing from 15nm to 40nm with barrier ’ s thickness increasing 采用迭代法求解schrodinger - poisson方程,当algan势垒层掺杂浓度为1 1018cm - 3时,二维电子气浓度最高可达1 1012cm - 2 ,并且二维电子气薄层厚度随着势垒层厚度的增加从15nm增加到40nm 。
